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| SMD Type MOS Field Effect Transistor 2SK3225 IC MOSFET Features Low On-State Resistance RDS(on)1 = 18 m RDS(on)2 = 27 m MAX. (VGS = 10 V, ID = 17A) +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Built-in Gate Protection Diode +0.15 0.50-0.15 Low Ciss : Ciss = 2100 pF TYP. 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Symbol VDSS VGSS(AC) VGSS(DC) Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg ID Idp * PD Rating 60 20 +20,-10 34 136 40 2.0 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=17A,VGS(on)=10V,RG=10 ,VDD=30V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=17A VGS=10V,ID=17A VGS=4V,ID=17A 1..0 13 1.5 27 13 18 2100 550 220 32 300 110 140 18 27 Min Typ Max 10 10 2.0 Unit A A V S m m pF pF pF ns ns ns ns 3.80 MAX. (VGS = 4.0 V, ID = 17 A) www.kexin.com.cn 1 |
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